₹20,000
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PerformanceUpgrade to faster sequential read speed up to 5,000 MB/s, reaching 43% faster than the previous model. |
Power efficiency70% enhanced power efficiency compared to the previous model, supporting Modern Standby and longer battery life. |
VersatilityElevate everyday performance in gaming, business, and creative work with PCIe® 4.0 x4 and PCIe® 5.0 x2 compatibility. |
The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.
The light that starts from the left quickly flows to the right. The light flows into the SSD installed inside the computer, and the 990EVO appears. Next, the phrase "Sequential read speed up to 5,000 MB/s" appears in large letters, and underneath it, "Sequential writes Up to 4,200 MB/s", "Random reads Up to 700K IOPS", and "Random writes Up to 800K IOPS". Full speed information appears together.
Turn right on and stay on. With a remarkable 70% improvement in power efficiency over the previous model, compute for longer without worrying about battery life. Plus, it supports Modern Standby, letting you stay connected to the internet and still receive notifications even in the low-power state.
The 990 EVO's heat spreader label helps thermal control of the NAND chip. Samsung's cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.
All tasks with one SSD. Elevate your performance to meet the demands of gaming, business, and creative work. Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, it offers flexibility for current computing and what's to come. Stay on top with this all-around player.
Make your SSD works like magic. Samsung Magician software's optimization tools ensure the best SSD performance. It's the safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.
For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.
SPECIFICATIONS | |
Model Code (Capacity)1) | MZ-V9E1T0BW (1TB) |
General Feature | |
Application | Client PCs |
FORM FACTOR | M.2 (2280) |
INTERFACE | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
DIMENSION (WxHxD) | 80 x 22 x 2.38mm |
WEIGHT | Max 9.0g Weight |
STORAGE MEMORY | Samsung V-NAND TLC |
CONTROLLER | Samsung in-house Controller |
CACHE MEMORY | HMB(Host Memory Buffer) |
Special Feature | |
TRIM SUPPORT | Supported |
S.M.A.R.T SUPPORT | Supported |
GC (GARBAGE COLLECTION) | Auto Garbage Collection Algorithm |
ENCRYPTION SUPPORT | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
WWN SUPPORT | Not supported |
DEVICE SLEEP MODE SUPPORT | Yes |
Performance | |
SEQUENTIAL READ | 1TB: Up to 5,000 MB/s |
SEQUENTIAL WRITE | 1TB: Up to 4,200 MB/s |
RANDOM READ (4KB, QD32) | 1TB: Up to 680,000 IOPS |
RANDOM WRITE (4KB, QD32) | 1TB: Up to 800,000 IOPS |
RANDOM READ (4KB, QD1) | 1TB: Up to 20,000 IOPS |
RANDOM WRITE (4KB, QD1) | 1TB: Up to 90,000 IOPS |
Environment | |
AVERAGE POWER CONSUMPTION (System Level) |
1TB: Average: Read 4.9 W / Write 4.5 W |
POWER CONSUMPTION (IDLE) | 1TB: Typical 60 mW |
POWER CONSUMPTION (DEVICE SLEEP) | 1TB: Typical 5 mW |
ALLOWABLE VOLTAGE | 3.3 V ± 5 % Allowable voltage |
RELIABILITY (MTBF) | 1.5 Million Hours Reliability (MTBF) |
OPERATING TEMPERATURE | 0 - 70 ? Operating Temperature |
SHOCK | 1,500 G & 0.5 ms (Half sine) |
Warranty | |
MZ-V9E1T0BW (1TB) | 5-year or 600TBW limited warranty |